NPN T-1 Modified 3
Phototransistor
LTR-209
Features
Wide range of collector currents.
Lens for high sensitivity.
Low cost plastic package.
Package Dimensions
Description
The LTR-209 consist of a NPN silicon phototransistor
mounted in a lensed, clear plastic, end looking package.
The lensing effect of the package allows an accep-
tance half angle of 8 measured from the optical axis
to the half power point. This series is mechanically and
spectrally matched to the LTE-209 series of infrared
emitting diodes.
INFRARED
PRODUCTS
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from
the package.
5. Specifications are subject to change without notice.
Absolute Maximum Ratings at Ta=25
Parameter
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
[1.6mm (.063 in.) from body]
Maximum Rating
100
30
5
-40
-55
260
to +85
to +100
for 5 Seconds
Unit
mW
V
V
Electrical Optical Characteristics at Ta=25
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Emitter Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
On State Collector Current
Symbol
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
Tr
Tf
I
CEO
I
C(ON)
Min.
30
5
Typ.
Max.
Unit
V
V
Test
Condition
I
C
=1mA
Ee=0mW/cm
2
I
E
=100 A
Ee=0mW/cm
2
I
C
=100 A
Ee=1mW/cm
2
V
CC
=5V
I
C
=1mA
R
L
=1K
V
CE
=10V
Ee=0mW/cm
2
V
CE
=5V
Ee=1mW/cm
2
=940nm
0.4
10
15
100
1
4
V
S
S
nA
mA
10-29
1
2
