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LT1W92A Datasheet

  • LT1W92A

  • 3030 Size, 1.1mm Thickness, MID* Type Full Color Leadless Ch...

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  • SHARP

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Full Color Leadless Chip LED Device
LT1W92A
LT1W92A
(Under Development)
s
Outline Dimensions
3.0
4
2.6
3
Colorless transparency
0.4
3.0
2.6
1.1
3030 Size, 1.1mm Thickness, MID*
Type Full Color Leadless Chip
LED Device
s
Radiation Diagram
(T
a
=25藲C)
(Unit : mm)
-20藲
Red
Relative luminous intensity(%)
0藲
100
80
60
40
20
+20藲
+40藲
Yellow-green
-40藲
Black print
1
2
0.7
Recommended PWB pattern for soldering
0.5
0.5
1.2
0.5
1.2
1.2
Soldering area
Device center
-60藲
+60藲
-80藲
+80藲
0.4
0.5
1.2
[Anode]
X
-20藲
Relative luminous intensity(%)
[Cathode]
0藲
100
80
60
40
20
+60藲
Blue
+20藲
+40藲
(0.9)
1.2
(0.9)
1.Plating area
Resist
2.Pin connections
4
3
1 Anode(Blue)
2 Anode(Yellow-green)
3 Cathode
4 Anode(Red)
1
2
-40藲
Black print
(0.9)
-60藲
-80藲
+80藲
3.Unspecified tolerance:鹵0.2
*MID:Molded Interconnection Device
X
s
Absolute Maximum Ratings
Power dissipation Forward current Peak forward current
P
*1
I
F
I
FM*2
Model No. Radiation color Radiation material
(mW)
(mA)
(mA)
(
Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature
(mA/藲C)
V
R
T
opr
T
stg
T
sol*3
(V)
(藲C)
(藲C)
(藲C)
DC Pulse
260
260
260
)
Blue
-30 to +85 -40 to +100
GaN on SiC
200
30
100
0.67 1.33
5
-30 to +85 -40 to +100
LT1W92A
Yellow-green GaP
84
30
50
0.40 0.67
5
-30 to +85 -40 to +100
Red
GaAsP on GaP
84
30
50
0.40 0.67
5
*1 The value is specified under the condition that either color is lightened separately.
When all diodes are lightened simultaneously, the power dissipation of each diode should be less than 30% of the value specified in this table.
*2 Duty ratio=1/10, Pulse width=0.1ms
*3 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
s
Electro-optical Characteristics
Radiation
Lens
Model No.
color
type
Blue
Colorless
LT1W92A
Yellow-green
transparency
Red
Forward voltage
V
F
(V)
TYP
4.4
2.1
2.0
MAX
5.6
2.8
2.8
Peak emission wavelength
I
F
p
(nm)
(mA)
TYP
430
20
565
20
635
20
Luminous intensity
I
V
(mcd)
TYP
8.1
32.0
16.0
I
F
(mA)
20
20
20
Spectrum radiation bandwidth
鈭單?nm)
TYP
70
30
35
I
F
(mA)
20
20
20
Reverse current
V
R
I
R
(碌A(chǔ))
(V)
MAX
10
4
10
4
10
4
Terminal capacitance
C
t
(pF)
TYP
50
35
20
(T
a
=25藲C)
Page for
characteristics
(MH
Z
)
diagrams
----
1
----
1
----
1
隆In
the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet)
隆Data
for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)
(Notice)
10

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