Chip LED Device
LT1t82A series
LT1t82A series
s
Outline Dimensions
(Unit : mm)
3.3!2.9mm, 1.1mm Thickness,
High-luminosity Chip LED
Devices with Lens
s
Radiation Diagram
(T
a
=25藲C)
3.3
Colorless transparency
-40藲
-30藲
-20藲
-10藲
0藲 100 +10藲
+20藲
+30藲
+40藲
80
-50藲
Relative luminous intensity(%)
0.85 0.95
2.9
1.9
0.4
0.4
0.4
+50藲
60
1
2
0.6
2.9
-60藲
+60藲
40
+70藲
20
+80藲
-70藲
(4-R0.2)
0.9
+0.1
0.16
-0.06
(R0.55)
1.5
0.9
-80藲
(R0.2)
-90藲
0
+90藲
0.8
(0.3) (0.3)
(0.3)
(0.3)
0to0.15
0.3
1.1
-0.1
Pin connections
1 Anode
2 Cathode
Unspecified tolerance:鹵0.2
U,T type:Polarity faces in the opposite direction.
s
Absolute Maximum Ratings
Power dissipation Forward current Peak forward current
P
I
F
I
FM*1
Model No. Radiation color Radiation material
(mW)
(mA)
(mA)
+0.2
(T
a
=25藲C)
Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature
(mA/藲C)
V
R
T
opr
T
stg
T
sol*2
(V)
(藲C)
(藲C)
(藲C)
DC Pulse
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
350
350
350
350
350
350
350
350
4
0.40 0.67
50
30
75
LT1U82A
Red(Super-luminosity) GaAlAs on GaAIAs
5
0.40 0.67
50
30
66
LT1T82A
Red(High-luminosity) GaAlAs on GaAs
5
0.13 0.67
50
10
23
GaP
LT1P82A
Red
5
0.40 0.67
50
30
85
GaAsP on GaP
LT1D82A
Red
5
0.40 0.67
50
30
85
LT1S82A
Sunset orange GaAsP on GaP
5
0.27 0.67
50
20
50
GaAsP on GaP
LT1H82A
Yellow
5
0.27 0.67
50
20
50
LT1E82A
Yellow-green GaP
LT1K82A
Green
GaP
50
20
50
0.27 0.67
5
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
s
Electro-optical Characteristics
Lens type
Model No.
Forward voltage
V
F
(V)
TYP
1.85
1.75
1.9
2.0
2.0
1.9
1.95
1.95
MAX
2.5
2.2
2.3
2.8
2.8
2.5
2.5
2.5
Peak emission wavelength
I
F
位
p
(nm)
(mA)
TYP
20
660
660
20
5
695
20
635
20
610
10
585
10
565
10
555
Luminous intensity
I
F
I
V
(mcd)
(mA)
TYP
20
54.0
13.1
20
1.6
5
20
14.4
20
11.7
10
5.6
10
7.8
10
2.7
Spectrum radiation bandwidth
I
F
鈭單?nm)
(mA)
TYP
20
20
20
20
5
100
20
35
20
35
10
30
10
30
10
25
Reverse current
V
R
I
R
(碌A(chǔ))
(V)
MAX
3
100
10
4
4
10
4
10
4
10
4
10
4
10
4
10
Terminal capacitance
C
t
(pF)
TYP
25
30
55
20
15
35
35
40
(T
a
=25藲C)
Page for
characteristics
(MH
Z
)
diagrams
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1
LT1U82A
LT1T82A
LT1P82A
Colorless
LT1D82A
transparency
LT1S82A
LT1H82A
LT1E82A
LT1K82A
隆In
the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet)
隆Data
for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)
(Notice)
10
LT1S82A相關(guān)型號PDF文件下載
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型號
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描述
廠商
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