Leadless Chip LED Device
LT1t67A series
LT1t67A series
s
Outline Dimensions
(Unit : mm)
1608 Size, 0.8mm Thickness,
Leadless Chip LED Devices
s
Radiation Diagram
(T
a
=25藲C)
鹵0.15
-20藲
1.6
鹵0.15
0藲
100
Relative luminous intensity(%)
+20藲
+40藲
0.8
0.8
-40藲
80
60
+60藲
40
20
0
X
1
2
Recommended PWB pattern for soldering
1.2
1.0
0.5
0.8
0.85
0.8
Device center
0.8
-60藲
-80藲
+80藲
0.3
-20藲
-40藲
Relative luminous intensity(%)
1.Plating area
Resist
2.Pin connections
1 Cathode
2 Anode
1
3.Unspecified tolerance:鹵0.1
0藲
100
80
60
+20藲
+40藲
(0.3)
(0.4)
(0.3)
2
-60藲
+60藲
40
20
0
Y
(0.3)
Chip side mark
-80藲
+80藲
U type: There is Anode mark on the device because polarity faces in the
opposite direction.
s
Absolute Maximum Ratings
Power dissipation Forward current Peak forward current
P
I
F
I
FM*1
Model No. Radiation color Radiation material
(mW)
(mA)
(mA)
(T
a
=25藲C)
Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature
(mA/藲C)
V
R
T
opr
T
stg
T
sol*2
(V)
(藲C)
(藲C)
(藲C)
DC Pulse
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-30 to +85
-40 to +100
-40 to +100
-40 to +100
-40 to +100
-40 to +100
-40 to +100
-40 to +100
-40 to +100
350
350
350
350
350
350
350
350
4
0.40 0.67
50
30
75
LT1U67A
Red(Super-luminosity) GaAlAs on GaAlAs
5
0.13 0.67
50
10
23
GaP
LT1P67A
Red
5
0.40 0.67
50
30
84
GaAsP on GaP
LT1D67A
Red
5
0.40 0.67
50
30
84
LT1S67A
Sunset orange GaAsP on GaP
5
0.40 0.67
50
30
84
GaAsP on GaP
LT1H67A
Yellow
5
0.40 0.67
50
30
84
LT1E67A
Yellow-green GaP
5
0.40 0.67
50
30
84
LT1F67A
Yellow-green(High-luminosity) GaP
5
0.67
0.40
50
30
84
GaP
LT1K67A
Green
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
s
Electro-optical Characteristics
Lens type
Model No.
Forward voltage
V
F
(V)
TYP
1.85
1.9
2.0
2.0
2.0
2.1
2.1
2.1
MAX
2.5
2.3
2.8
2.8
2.8
2.8
2.8
2.8
Peak emission wavelength
I
F
位
p
(nm)
(mA)
TYP
20
660
5
695
20
635
20
610
20
585
20
565
20
570
20
555
Luminous intensity
I
F
I
V
(mcd)
(mA)
TYP
20
29.7
5
1.3
20
8.8
20
6.9
20
8.3
20
11.0
20
19.0
20
3.8
Spectrum radiation bandwidth
I
F
鈭單?nm)
(mA)
TYP
20
20
5
100
20
35
20
35
20
30
20
30
20
30
20
25
Reverse current
V
R
I
R
(碌A(chǔ))
(V)
MAX
3
100
4
10
4
10
4
10
4
10
4
10
4
10
4
10
Terminal capacitance
C
t
(pF)
TYP
25
55
20
15
35
35
35
40
(T
a
=25藲C)
Page for
characteristics
(MH
Z
)
diagrams
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1
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1
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1
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1
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1
----
1
鈫?/div>
1
LT1U67A
LT1P67A
LT1D67A
Milky
LT1S67A
diffusion
LT1H67A
LT1E67A
LT1F67A
LT1K67A
(Notice)
隆In
the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet)
隆Data
for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)
95
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