Dichromatic Leadless Chip LED Device
LT1tt67A series
LT1tt67A series
s
Outline Dimensions
1.6
鹵0.15
1616 Size, 0.8mm Thickness,
Compact Dichromatic Leadless
Chip LED Devices
(Unit : mm)
s
Radiation Diagram
(T
a
=25藲C)
0.8
3
4
2
1
0.8
-20藲
-40藲
0藲
100
Relative luminous intensity(%)
+20藲
+40藲
1.6
鹵0.15
80
60
40
20
+80藲
E.K
+60藲
H.S.D
Recommended PWB pattern for soldering
-60藲
1.0
0.5
1.6
0.3
0.8
0.3
Soldering area
1.2
0.6
1.2
-80藲
X
-20藲
-40藲
(0.4)
(0.6)
1.Plating area
Resist
2.Pin connections
series
KS
EH
ED
Pin
1 Anode
Green Yellow-green Yellow-green
4 Cathode
3 Cathode
Sunset
2 Anode
orange
Yellow Red
0藲
100
Relative luminous intensity(%)
+20藲
+40藲
80
60
40
20
H.S.D
+60藲
E.K
-60藲
3. Unspecified tolerance:鹵0.1
-80藲
+80藲
Y
s
Absolute Maximum Ratings
*1
Power dissipation Forward current Peak forward current
P
I
F
I
FM*2
Model No. Radiation color Radiation material
(mW)
(mA)
(mA)
LT1EH67A
(T
a
=25藲C)
Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature
(mA/藲C)
V
R
T
opr
T
stg
T
sol*3
(V)
(藲C)
(藲C)
(藲C)
DC Pulse
350
350
350
350
350
350
-30 to +85 -40 to +100
5
0.40 0.67
50
30
84
Yellow-green GaP
5
0.40 0.67
50
30
-30 to +85 -40 to +100
84
GaAsP on GaP
Yellow
-30 to +85 -40 to +100
Green
5
0.40 0.67
50
30
84
GaP
LT1KS67A
-30 to +85 -40 to +100
Sunset orange GaAsP on GaP
5
0.40 0.67
50
30
84
-30 to +85 -40 to +100
5
Yellow-green GaP
0.40 0.67
50
30
84
LT1ED67A
-30 to +85 -40 to +100
5
0.40 0.67
50
30
84
GaAsP on GaP
Red
*1 The value is specified under the condition that either color is lightened separately. When the both diodes are lightened simultaneously,
the power dissipation of each diode should be less than the half of the value specified in this table.
*2 Duty ratio=1/10, Pulse width=0.1ms
*3 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
s
Electro-optical Characteristics
Radiation
Lens
Model No.
color
type
Yellow-green
LT1EH67A
Yellow
Milky
Green
diffusion
LT1KS67A
Sunset orange
Yellow-green
LT1ED67A
Red
Forward voltage
V
F
(V)
TYP
2.1
2.0
2.1
2.0
2.1
2.0
MAX
2.8
2.8
2.8
2.8
2.8
2.8
Peak emission wavelength
I
F
位
p
(nm)
(mA)
TYP
20
565
20
585
20
555
20
610
20
565
20
635
Luminous intensity
I
F
I
V
(mcd)
(mA)
TYP
20
19.0
20
8.3
20
3.8
20
6.9
20
19.0
20
8.8
Spectrum radiation bandwidth
I
F
鈭單?nm)
(mA)
TYP
20
30
20
30
20
25
20
35
20
30
20
35
Reverse current
V
R
I
R
(碌A(chǔ))
(V)
MAX
4
10
4
10
4
10
4
10
4
10
4
10
Terminal capacitance
C
t
(pF)
TYP
35
35
40
15
35
20
(T
a
=25藲C)
Page for
characteristics
(MH
Z
)
diagrams
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1
devices
catalogs, data books, etc. Contact SHARP
02
(Internet)
隆Data
forshown inoptoelectronic/power device is provided for in order to obtain the latest device specification sheets before using any SHARP device.
sharp's
internet.(Address http://www.sharp.co.jp/ecg/)
(Notice)
隆In
the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
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