LSP1000 thru LSP1012
MICROWAVE PRODUCTS DIVISION
ENHANCED PERFORMANCE
SURFACE MOUNT "EPSM" PACKAGED DEVICES
PRODUCT PREVIEW
DESCRIPTION
KEY FEATURES
!"
Frequencies from VHF to 6
GHz
!"
Lower Parasitics
!"
Grade Ceramic/Epoxy
Mil
Amalgam Construction
!"
Dense SiO2 Junction
Passivation
!"
Superior
Consistency/Repeatability
!"
Footprints Available for
SOT-23/SOD-323/SOD-123
!"
Priced for Commercial
Products
!"
Tape & Reel for Volume
Pick & Place
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFIT S
!"
High performance wireless
surface mounting including:
!"
GSM
!"
TAGS
!"
WANS
!"
PCS
!"
AMPS
!"
DECT
!"
CELLULAR
W W W .
Microsemi
.COM
Our EPSM packaged devices are designed for the most demanding
commercial and Military requirements where the inconsistency of
performance inherent in plastic surface mount packages cannot be
tolerated. These package styles extend the surface mount construction
format to 6 GHz for high performance wireless applications including
VCO's, limiters, pin switches and pin attenuators. Select PIN diodes for
switching, attenuation or limiting through 6 GHz. They are available in
multiple chip configuration as well as outlines which directly replace SOT-
23 and SOD-323 devices. Other devices and values are always available -
contact our applications engineering department for more details.
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
PIN DIODE DEVICES
FOR WIRELESS ATTENUATORS,
SWITCHES AND LIMITERS
ABSOLUTE MAXIMUM RATINGS AT 25擄C
擄
Forward Current (I
F
):
Power Dissipation (P
D
):
Peak Inverse Volts (PIV):
Junction Temp. (Operating):
Storage Temp. (Non-Operating):
Leakage:
1 Amp (1碌s Pulse)
碌
500 mW
(Derate to 0 at max T
J
)
Same as V
B
-65擄C to + 125擄C
擄
擄
-65擄C to + 125擄C
擄
擄
<50 nA @ 80%
%
V
B
@ 25擄C
擄
MODEL
LSP1000
VB
> 35
TABLE 1
C
T
@ V
R
MAX.
.28 @ 5V
.32 @
50V
RS @ IF
MAX.
2.5鈩?@
鈩?/div>
5 mA
4鈩?@
鈩?/div>
100 mA
0.6鈩?@
鈩?/div>
10 mA
2鈩?@
鈩?/div>
100 mA
TL
TYP.
80nS
APPLIC
-TION
SWITCH
ATTENU-
ATOR
TEST CONDITIONS:
R
S
@ 100 MHz
V
B
@ 10
碌
A
T
L
@ I
F
= 10 mA
C
T
@ 1 MHz
I
R
= 6 mA
LSP1002
> 100
1500nS
LSP1000 thru LSP1012
LSP1000 thru LSP1012
LSP1004
> 35
.75 @
20V
.35 @
50V
150nS
SWITCH
ATTENU-
ATOR
LSP1011
> 200V
2000nS
LSP1012
> 20V
.35pF @
10V
1.8鈩?@
鈩?/div>
10 mA
5nS
LIMITER
Copyright
錚?/div>
2000
MSC1618.PDF 2000-11-06
Microsemi
Microwave Products Division
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
LSP1012相關(guān)型號(hào)PDF文件下載
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英文版
SWITCH SNAP ACTION SPDT 10A 120V
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ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES
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英文版
SURGE PROTECTOR 10KA 120V PARL
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英文版
SURGE PROTECTOR 10KA 120V SERIES
-
英文版
SURGE PROTECTOR 10KA 240V PARL
-
英文版
SURGE PROTECTOR 10KA 240V SERS
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英文版
SURGE PROTECTOR 10KA 277V PARL
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英文版
SURGE PROTECTOR 10KA 277V SERS
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英文版
SURGE PROTECTOR 10KA 347V PARL
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英文版
SURGE PROTECTOR 10KA 347V SERS
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英文版
SURGE PROTECTOR 10KA 480V PARL
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