LSK389
Linear Integrated Systems
FEATURES
ULTRA LOW NOISE
TIGHT MATCHING
HIGH BREAKDOWN VOLTAGE
HIGH GAIN
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25 擄C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +125 擄C
Maximum Currents
Gate Forward Current
Maximum Voltages
Gate to Source
Gate to Drain
-65 to +150 擄C
-55 to +135 擄C
400mW
I
G(F)
= 10mA
V
GSS
= 40V
V
GDS
= 40V
ULTRA LOW NOISE
MONOLITHIC DUAL
N-CHANNEL JFET
e
n
= 0.9nV/鈭欻z (typ)
|V
GS1-2
| = 20mV max
BV
GSS
= 40V max
Y
fs
= 20mS (typ)
25pF typ
TO-71
BOTTOM VIEW
SOIC-A
S1
1
2
3
4
8
7
6
5
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
G1
D1
S1
2
1
7
3
5
6
G2
SS
D2
S2
S2
D2
G2
D1
SS
G1
*For equivalent single version, see LSK170 family.
MATCHING CHARACTERISTICS @ 25 擄C (unless otherwise stated)
SYMBOL
V
GS1
鈭?/div>
V
GS2
I
DSS1
I
DSS2
CHARACTERISTIC
Differential Gate to Source Cutoff
Voltage
MIN
TYP
MAX
UNIT
CONDITIONS
20
0.9
mV
-
V
DS
= 10V, I
D
= 1mA
V
DS
= 10V, V
GS
= 0V
Gate to Source Saturation Current Ratio
ELECTRICAL CHARACTERISTICS @ 25 擄C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX UNITS
CONDITIONS
BV
GSS
V
GS(OFF)
I
DSS
I
GSS
Gate to Source Breakdown Voltage
Gate to Source Pinch-off Voltage
Drain to Source Saturation
Current
LSK389A
LSK389B
LSK389C
40
0.15
2.6
6
10
2
6.5
12
20
200
V
V
mA
pA
V
DS
= 0, I
D
= 100碌A(chǔ)
V
DS
= 10V, I
D
= 0.1碌A(chǔ)
V
DS
= 10V, V
GS
= 0
V
GS
= -30V, V
DS
= 0
Gate to Source Leakage Current
Linear Integrated Systems
鈥?4042 Clipper Court 鈥?Fremont, CA 94538 鈥?Tel: 510 490-9160 鈥?Fax: 510 353-0261
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