LSK170
Linear Integrated Systems
FEATURES
ULTRA LOW NOISE (f = 1kHz)
HIGH BREAKDOWN VOLTAGE
HIGH GAIN
HIGH INPUT IMPEDANCE
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25 擄C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +125 擄C
Maximum Currents
Gate Forward Current
Maximum Voltages
Gate to Source
Gate to Drain
V
GSS
= 40V
V
GDS
= 40V
I
G(F)
= 10mA
*For equivalent monolithic dual, see LSK389 family.
400mW
-65 to +150 擄C
-55 to +135 擄C
e
n
= 0.9nV/鈭欻z
BV
GSS
= 40V max
Y
fs
= 22mS (typ)
I
G
= -500pA max
22pF max
ULTRA LOW NOISE
SINGLE N-CHANNEL JFET
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170
TO-92
BOTTOM VIEW
SOT-23
TOP VIEW
D
1
3
D G S
1 2 3
G
S
2
ELECTRICAL CHARACTERISTICS @ 25 擄C (unless otherwise stated)
SYMBOL
BV
GSS
V
GS(OFF)
V
GS
I
DSS
I
G
I
GSS
Y
fss
Y
fs
e
n
e
n
C
ISS
C
RSS
1.
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Pinch-off Voltage
Gate to Source Operating Voltage
Drain to Source Saturation
Current
Gate Operating Current
Gate to Source Leakage Current
Full Conduction Transconductance
Typical Conduction Transconductance
Noise Voltage
Noise Voltage
Common Source Input Capacitance
Common Source Reverse Transfer Cap.
LSK170A
LSK170B
LSK170C
MIN
40
0.2
TYP
MAX UNITS
V
2
V
V
6.5
12
20
0.5
1
nA
nA
mS
mS
1.9
4
nV/鈭欻z
nV/鈭欻z
pF
pF
mA
CONDITIONS
V
DS
= 0, I
D
= 100碌A(chǔ)
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, I
D
= 1mA
V
DG
= 10V, V
GS
= 0
V
DG
= 10V, I
D
= 1mA
V
DG
= 10V, V
DS
= 0
V
GD
= 10V, V
GS
= 0,
f
= 1kHz
V
DG
= 15V, I
D
= 1mA
V
DS
= 10V, I
D
= 2mA,
f
= 1kHz,
NBW = 1Hz
V
DS
= 10V, I
D
= 2mA,
f
= 10Hz,
NBW = 1Hz
V
DS
= 15V, I
D
= 500碌A(chǔ)
0.5
2.6
6
10
22
10
0.9
2.5
20
5
Absolute maximum ratings are limiting values above which serviceability may be impaired.
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Linear Integrated Systems
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