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LSCP10C60 Datasheet

  • LSCP10C60

  • Silicon Controlled Rectifiers

  • 5頁(yè)

  • ETC

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SemiWell
Semiconductor
SCP10C60
Symbol
3. Gate
鈼?/div>
鈼?/div>
Silicon Controlled Rectifiers
鈻?/div>
1
23
Features
Repetitive Peak Off-State Voltage : 600V
鈼?/div>
R.M.S On-State Current ( I
T(RMS)
= 10 A )
鈼?/div>
Low On-State Voltage (1.4V(Typ.)@ I
TM
)
鈼?/div>
Non-isolated Type
鈼?/div>
鈼?/div>
2. Anode
1. Cathode
TO-220
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
STG
( T
J
= 25擄C unless otherwise specified )
Condition
Ratings
600
Half Sine Wave : T
C
= 111 擄C
180擄 Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
6.4
10
110
60
50
5
0.5
2
5.0
- 40 ~ 125
- 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
2
t
for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Units
V
A
A
A
A
2
s
A/
銕?/div>
W
W
A
V
擄C
擄C
Aug, 2003. Rev. 3
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.

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