LS5905 LS5906 LS5907
LS5908 LS5909
Linear Integrated Systems
FEATURES
LOW DRIFT
ULTRA LOW LEAKAGE
LOW PINCHOFF
|鈭哣
GS1-2
/鈭員|= 5碌V/擄C max.
I
G
= 150fA TYP.
V
P
= 2V TYP.
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25擄C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65擄 to +150擄C
+150擄C
D1
S1
G2
G1
3
5
S2
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
40V
-V
GSS
-V
DSO
-I
G(f)
-I
G
Drain to Source Voltage
Gate Forward Current
Gate Reverse Current
40V
10mA
10碌A
D1
2
D2
S1
G1
S2
6
D2
1
7
G2
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
22 X 20 MILS
40mW @ +125擄C
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25
擄
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS5906 LS5907 LS5908 LS5909 LS5905
5
10
20
40
40
|鈭哣
GS1-2
/鈭員| max. Drift vs. Temperature
|V
GS1-2
| max.
-I
G
max.
-I
G
max.
-I
GSS
max.
-I
GSS
max.
SYMBOL
BV
GSS
BV
GGO
Y
fss
Y
fs
|Y
fs1-2
/Y
fs
|
I
DSS
|I
DSS1-2
/I
DSS
|
V
GS
(off) or V
P
V
GS
I
GGO
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Gate-to-Gate Leakage
5
1
1
2
5
MIN.
40
40
70
50
--
60
--
0.6
--
--
5
1
1
2
5
TYP.
60
--
300
100
1
400
2
2
--
1
10
1
1
2
5
MAX.
--
--
500
200
5
1000
5
4.5
4
--
15
1
1
2
5
UNITS
V
V
碌mho
碌mho
%
碌A
%
V
V
pA
15
3
3
5
10
UNITS CONDITIONS
碌V/擄C
V
DG
= 10V, I
D
= 30碌A
T
A
=-55擄C to +125擄C
mV
pA
nA
pA
nA
T
A
= +125擄C
V
DS
= 0V
T
A
= +125擄C
V
GS
= 20V
V
DG
=10V
I
D
= 30碌A
CONDITIONS
V
DS
= 0
I
D
= 1nA
I
G
= 1nA
V
DG
= 10V
V
DG
= 10V
I
D
= 0
V
GS
= 0
I
D
= 30碌A
I
S
= 0
f= 1kHz
f= 1kHz
V
DG
= 10V
V
GS
= 0
V
DS
= 10V
V
DS
= 10V
V
GG
=20V
I
D
= 1nA
I
D
= 30碌A
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 鈥?TEL: (510) 490-9160 鈥?FAX: (510) 353-0261
1
2
