LS421, LS422, LS423,
LS424, LS425, LS426
Linear Integrated Systems
FEATURES
HIGH INPUT IMPEDANCE
HIGH GAIN
LOW POWER OPERATION
I
G
=0.25pA MAX
gfs=120碌mho MIN
V
GS(off)
=2V MAX
S1
G2
G1
3
C
4
5
6
D2
S2
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25擄C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-65擄 to +150擄C
Operating Junction Temperature
+150擄C
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
40V
-V
GSS
-V
DSO
-I
G(f)
Drain to Source Voltage
Gate Forward Current
40V
10mA
400mW @ +125擄C
D1
D2
D1
2
S1
1
7
G2
G1
S2
TO-78
BOTTOM VIEW
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
22 X 20 MILS
ELECTRICAL CHARACTERISTICS @ 25
擄
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS
10
25
40
10
25
40
碌V/擄C
V
DG
= 10V I
D
= 30碌A
|鈭哣
GS1-2
/鈭員| max. Drift vs. Temperature
T
A
=-55擄C to +125擄C
|V
GS1-2
| max.
V
GS(off)
V
GS
I
G
max.
-I
G
max.
-I
GSS
max.
-I
GSS
max.
SYMBOL
BV
GSS
BV
GGO
Y
fss
Y
fs
I
DSS
Offset Voltage
GATE VOLTAGE
Pinchoff Voltage
Operating Range
Operating
High Temperature
At Full Conduction
High Temperature
10
2.0
1.8
.25
250
1.0
1.0
15
2.0
1.8
.25
250
1.0
1.0
25
2.0
1.8
.25
250
1.0
1.0
10
3.0
2.9
.500
500
3.0
3.0
15
3.0
2.9
.500
500
3.0
3.0
25
3.0
2.9
.500
500
3.0
3.0
mV
V
V
pA
pA
pA
nA
V
DG
=10V
V
DS
=10V
V
DG
=10V
V
DG
=10V
T
A
= +125擄C
V
DS
= 0V
T
A
= +125擄C
V
GS
= 20V
I
D
= 30碌A
I
D
= 1nA
I
D
= 30碌A
I
D
= 30碌A
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
DRAIN CURRENT
Full Conduction
MIN.
40
40
300
120
60
60
TYP.
60
--
--
200
--
--
MAX.
--
--
1500
350
1000
1800
UNITS
V
V
碌mho
碌mho
碌A
碌A
CONDITIONS
V
DS
= 0
I
G
= 1nA
I
G
= 1碌A
V
DS
= 10V
V
DG
= 10V
LS421-3
LS424-6
I
D
= 0
V
GS
= 0
I
D
= 30碌A
V
DS
= 10V
I
S
= 0
f= 1kHz
f= 1kHz
V
GS
= 0
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 鈥?FAX: (510) 353-0261
1
2
