鈥?/div>
+33.5 dBm Typical Power at 18 GHz
7 dB Typical Power Gain at 18 GHz
+30.5 dBm at 3.3V Battery Voltage
Low Intermodulation Distortion
45% Power-Added-Efficiency at 18 GHz
SOURCE BOND
PAD (x2)
GATE PAD
(x4)
DIE SIZE: 28.3 x 16.5 mils (720 x 420
碌m)
DIE THICKNESS: 2.6 mils (65
碌m
typ.)
BONDING PADS: 1.9 x 2.4 mils (50 x 60
碌m
typ.)
DESCRIPTION AND APPLICATIONS
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron
Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25
碌m
by 3000
碌m
Schottky barrier gate. The
recessed 鈥渕ushroom鈥?gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and
processing have been optimized for reliable high-power applications. The LP3000 also features Si
3
N
4
passivation and is
available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in
a ceramic flanged package (P100) and ball grid array package.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The
LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.
PERFORMANCE SPECIFICATIONS (T
A
= 25擄C)
SYMBOLS
I
DSS
P
1dB
G
1dB
畏
ADD
I
MAX
G
M
V
P
I
GSO
BV
GS
BV
GD
螛
J
PARAMETERS
Saturated Drain-Source Current
V
DS
= 2V V
GS
= 0V
Output Power at 1dB Gain Compression
f
= 18 GHz
V
DS
= 8.0V, I
DS
= 50% I
DSS
(LP. LPV)
Power Gain at 1dB Gain Compression
f
= 18 GHz
V
DS
= 8.0V, I
DS
= 50% I
DSS
(LP)
f
= 18 GHz
V
DS
= 8.0V, I
DS
= 50% I
DSS
(LPV)
Power-Added Efficiency (typ. for Class A operation)
Maximum Drain-Source Current
V
DS
= 2V V
GS
= +1V
Transconductance
V
DS
= 2V V
GS
= 0V
Pinch-Off Voltage
V
DS
= 2V I
DS
= 10mA
Gate-Source Leakage Current
V
GS
= -5V
Gate-Source Breakdown Voltage
I
GS
= 15mA
Gate-Drain Breakdown Voltage
I
GD
= 15mA
Thermal Resistivity
MIN
800
TYP
1060
MAX
1100
UNITS
mA
33.0
4.0
6.0
33.5
6.0
7.0
45
1700
900
-1.2
15
-15
-16
20
dBm
dB
dB
%
mA
mS
V
碌A(chǔ)
V
V
擄C/W
725
-0.25
-12
-12
-2.0
125
Get Curtice Model
DSS-027 WG
Phone:
(408) 988-1845
Internet:
http://www.filtronicsolidstate.com
Fax:
(408) 970-9950
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