鈥?/div>
DESCRIPTION AND APPLICATIONS
The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
碌m
by 200
碌m
Schottky barrier gate. The recessed 鈥渕ushroom鈥?Ti/Pt/Au gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for high dynamic range. The LPD200鈥檚 active areas are passivated with Si
3
N
4
, and
the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that
require a surface-mount package.
The LPD200SOT343 is designed for commercial systems for use in low noise amplifiers and
oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it
appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for
WLAN and ISM band spread spectrum applications.
鈥?/div>
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25擄C
擄
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB
Compression
Power-Added Efficiency
Noise Figure
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Symbol
I
DSS
P-1dB
G-1dB
PAE
NF
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
f=2GHz; V
DS
= 3 V; I
DS
= 50% I
DSS
f=2GHz; V
DS
= 3 V; I
DS
= 50% I
DSS
f=2GHz; V
DS
= 3 V; I
DS
= 50% I
DSS
;
P
OUT
= 19.5 dBm
f=2GHz; V
DS
= 3V; I
DS
= 25% I
DSS
f=2GHz; V
DS
= 5V; I
DS
= 50% I
DSS
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 1 mA
I
GS
= 1 mA
I
GD
= 1 mA
-0.25
6
8
7
9
50
Min
45
14
20
15.5
21
50
0.6
0.8
70
1
10
-1.5
Typ
Max
75
Units
mA
dBm
dB
%
dB
dB
mS
碌A(chǔ)
V
V
V
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
2/09/01
Email:
sales@filss.com
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