(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Schottky barrier gate. The recessed 鈥渕ushroom鈥?/div>
Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for high dynamic range. The LPD200鈥檚 active areas are
passivated with Si
3
N
4
, and the P70 ceramic package is ideal for low-cost, high-performance
applications that require a surface-mount package.
Typical applications include high dynamic range receiver preamplifiers for commercial applications
including Cellular/PCS systems and other types of commercial wireless systems.
鈥?/div>
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25擄C*
擄
Parameter
Saturated Drain-Source Current**
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Noise Figure
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Symbol
I
DSS
P-1dB
G-1dB
PAE
NF
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
IN
= 11 dBm
V
DS
= 3.3 V; I
DS
= 25% I
DSS
;
f=2 GHz
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 1 mA
I
GS
= 1 mA
-0.25
-6
-8
60
Min
40
19
8
20
9.5
50
0.7
125
80
1
-0.8
-7
-9
15
-1.5
Typ
Max
85
Units
mA
dBm
dB
%
dB
mA
mS
碌A(chǔ)
V
V
V
Gate-Drain Breakdown
|V
BDGD
|
I
GD
= 1 mA
Voltage Magnitude
*frequency=18 GHz, unless otherwise noted
**Formerly binned as: LPD200P70-1 = 40-65 mA and LPD200P70鈥? = 66-85 mA
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/20/01
Email:
sales@filss.com
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