鈥?/div>
DESCRIPTION AND APPLICATIONS
The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
碌m
by 200
碌m
Schottky barrier gate. The recessed 鈥渕ushroom鈥?Ti/Pt/Au gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for high dynamic range. The LPD200鈥檚 active areas are passivated with Si
3
N
4
, and
the micro X package is ideal for low-cost, high-performance applications that require a surface-
mount package.
The LPD200MX is designed for commercial systems for use in low noise amplifiers and oscillators
operating over the RF and Microwave frequency ranges. The low noise figure makes it appopriate
for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and
ISM band spread spectrum applications.
鈥?/div>
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25擄C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB
Compression
Power-Added Efficiency
Noise Figure
Output Intercept Point
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Symbol
I
DSS
P-1dB
G-1dB
PAE
NF
IP3
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
f=1.8GHz; V
DS
= 5 V; I
DS
= 50% I
DSS
f=1.8GHz; V
DS
= 5 V; I
DS
= 50% I
DSS
f=1.8GHz; V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
OUT
= 19.5 dBm
f=1.8GHz; V
DS
= 5V; I
DS
= 50% I
DSS
f=1.8GHz; V
DS
= 3V; I
DS
= 25% I
DSS
f=1.8GHz; V
DS
= 5V; I
DS
= 50% I
DSS
;
P
OUT
= 4 dBm
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 1 mA
I
GS
= 1 mA
I
GD
= 1 mA
-0.25
6
8
7
9
50
Min
45
14
18
15.5
19
60
1.4
1.0
31
70
1
10
-1.5
dBm
mS
碌A(chǔ)
V
V
V
Typ
Max
75
Units
mA
dBm
dB
%
dB
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
5/02/01
Email:
sales@filss.com
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