鈥?/div>
DESCRIPTION AND APPLICATIONS
The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
碌m
by 200
碌m
Schottky barrier gate. The recessed 鈥渕ushroom鈥?gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for ultra low noise and usable gain to 40 GHz. The LP7512 also features Si
3
N
4
passivation and is available in a variety of packages.
Typical applications include low noise receiver preamplifiers for commercial applications including
wireless systems and radio link systems.
鈥?/div>
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25擄C
擄
Parameter
Saturated Drain-Source Current
Noise Figure
Associated Gain at minimum
NF
Transconductance
Gate-Source Leakage Current
Gate-Drain Leakage Current
Pinch-Off Voltage
Thermal Resistivity
frequency=18 GHz
Symbol
I
DSS
NF
G
A
G
M
I
GSO
I
GDO
V
P
螛
JC
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 2 V; I
DS
= 25% I
DSS
; f=12 GHz
f=18 GHz
V
DS
= 2 V; I
DS
= 25% I
DSS
; f=12 GHz
f=18 GHz
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -3 V
V
GD
= -3 V
V
DS
= 2 V; I
DS
= 1 mA
-0.25
9
7.5
60
Min
15
Typ
35
0.6
1.0
10
8.5
90
1
1
-0.8
325
10
10
-1.5
Max
50
0.9
1.4
Units
mA
dB
dB
dB
dB
mS
碌A(chǔ)
碌A(chǔ)
V
擄C/W
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/18/01
Email:
sales@filss.com
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