鈥?/div>
DESCRIPTION AND APPLICATIONS
The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
碌
m by 750
碌
m Schottky barrier gate. The recessed 鈥渕ushroom鈥?gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for reliable high-power applications. The LP750 also features Si
3
N
4
passivation and is
available in a variety of packages, including SOT89 and P100 packages.
Typical applications include commercial and other types of high-performance power amplifiers,
including use within SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
DIE SIZE: 12.6X16.9 mils (320x430
碌m)
DIE THICKNESS: 3 mils (75
碌m)
BONDING PADS: 3.3X2.4 mils (85x60
碌m)
鈥?/div>
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25擄C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
Symbol
I
DSS
P-1dB
G-1dB
PAE
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
螛
JC
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
;
P
IN
= 10 dBm
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 2 V; I
DS
= 4 mA
I
GS
= 4 mA
I
GD
= 4 mA
-0.25
-12
-12
180
Min
180
26.5
8
Typ
225
28
10
55
400
230
5
-1.2
-15
-16
65
40
-2.0
Max
265
Units
mA
dBm
dB
%
mA
mS
碌A
V
V
V
擄C/W
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
2/26/01
Email:
sales@filss.com
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