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LP750P100 Datasheet

  • LP750P100

  • PACKAGED 0.5 WATT POWER PHEMT

  • 3頁

  • FILTRONIC

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LP750P100
P
ACKAGED
0.5 W
ATT
P
OWER
PHEMT
鈥?/div>
FEATURES
鈾?/div>
鈾?/div>
鈾?/div>
鈾?/div>
鈾?/div>
鈥?/div>
41 dBm IP3 at 12 GHz
27.5 dBm P-1dB at 12 GHz
10.5 dB Power Gain at 12 GHz
2.5 dB Noise Figure at 12 GHz
60% Power-Added-Efficiency
DESCRIPTION AND APPLICATIONS
The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25
碌m
Schottky barrier gate. The recessed 鈥渕ushroom鈥?gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for reliable high-power/low-noise applications. The LP750 also features Si
3
N
4
passivation and is available in die form or in surface-mount packages.
The LP750P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
鈥?/div>
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 22 鹵 3 擄C
Parameter
Output Power @
1 dB Compression
Power Gain @
1 dB Compression
Maximum Available Gain
Noise Figure
Power-Added Efficiency
Output Intercept Point
Saturated Drain-Source Current
Transconductance
Pinch-Off Voltage
Gate-Drain Breakdown
Voltage Magnitude
Gate-Source Breakdown
Voltage Magnitude
Gate-Source Leakage
Current Magnitude
Symbol
P
1dB
G
1dB
MAG
NF
IP
3
I
DSS
G
M
V
P
|V
BDGD
|
|V
BDGS
|
|I
GSL
|
Test Conditions
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
f = 12GHz; V
DS
= 5V; I
DS
= 33% I
DSS
f = 12GHz; V
DS
= 5V; I
DS
= 50% I
DSS
;
P
OUT
= 25dBm
f = 12GHz; V
DS
= 8V; I
DS
= 50% I
DSS
;
P
OUT
= 10dBm
V
DS
= 2V; V
GS
= 0V
V
DS
= 2V; V
GS
= 0V
V
DS
= 2V; I
DS
= 4mA
I
GD
= 4mA
I
GS
= 4mA
V
GS
= -5V
180
230
-2.0
12
12
280
-1.2
15
16
5
45
-0.25
Min
26.0
9.0
Typ
27.5
10.5
14.0
2.5
60
41
265
Max
Units
dBm
dB
dB
dB
%
dBm
mA
mS
V
V
V
碌A(chǔ)
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filtronicsolidstate.com
Revised:
03/02/01
Email:
sales@filss.com

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