鈥?/div>
DESCRIPTION AND APPLICATIONS
DIE SIZE: 14.2X13.0 mils (360x330
碌m)
DIE THICKNESS: 3.9 mils (100
碌m)
BONDING PADS: 1.9X1.9 mils (50x50
碌m)
The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
碌m
by 360
碌m
Schottky barrier gate. The recessed 鈥渕ushroom鈥?gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for high dynamic range. The LP6836 also features Si
3
N
4
passivation and is available in
P70 and SOT343 package types.
Typical applications include high dynamic range driver stages for commercial applications including
wireless infrastructure systems and broad bandwidth amplifiers.
鈥?/div>
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25擄C
擄
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
Symbol
I
DSS
P-1dB
G-1dB
PAE
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
螛
JC
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 2 mA
I
GS
= 2 mA
I
GD
= 2 mA
-0.25
-11
-12
75
Min
80
24
8.5
Typ
115
25
9.5
55
190
100
1
-1.2
-15
-16
100
10
-2.0
Max
125
Units
mA
dBm
dB
%
mA
mS
碌A(chǔ)
V
V
V
擄C/W
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/18/01
Email:
sales@filss.com
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