鈥?/div>
DESCRIPTION AND APPLICATIONS
The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic
range.
It utilizes a 0.25
碌m
x 360
碌m
Schottky barrier gate, defined by electron-beam
photolithography.
Typical applications include pre-drivers in commercial wireless infrastructure and radio link high-
performance power amplifiers.
鈥?/div>
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25擄C*
擄
Parameter
Saturated Drain-Source Current**
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Symbol
I
DSS
P-1dB
G-1dB
PAE
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
IN
= 20 dBm
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 2 mA
I
GS
= mA
-0.25
-11
70
Min
80
22
10.5
23
12
50
190
95
1
-0.8
-15
15
-2.0
Typ
Max
125
Units
mA
dBm
dB
%
mA
mS
碌A(chǔ)
V
V
Gate-Drain Breakdown
|V
BDGD
|
I
GD
= 2 mA
-12
-16
V
Voltage Magnitude
*frequency=15 GHz, unless otherwise noted
**Formerly binned as: LP6836P70-1 = 80-95 mA, LP6836P70鈥? = 96-105 mA, and LP6836P70-3 = 106-125 mA
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/22/01
Email:
sales@filss.com
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