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LP2301LT1G Datasheet

  • LP2301LT1G

  • Leshan Radio Company [20V P-Channel Enhancement-Mode MOSFET...

  • LRC

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LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
V
DS
= -20V
R
DS(ON),
Vgs@-4.5V, Ids@-2.8A = 100
m惟
R
DS(ON),
Vgs@-2.5V, Ids@-2.0A = 150
m惟
3
LP2301LT1G
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
1
2
SOT鈥?23 (TO鈥?36AB)
鈻?/div>
Simple Drive Requirement
鈻?/div>
Small Package Outline
鈻?/div>
Surface Mount Device
鈻?/div>
Pb-Free package is available
3
D
G
1
2
Maximum Ratings and Thermal Characteristics
(T
A
= 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
TA = 25
o
C
TA = 75 C
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
2)
o
S
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
qJC
R
qJA
Limit
-20
鹵8
-2.3
-8
0.9
0.57
-55 to 150
Unit
V
A
W
o
C
o
C/W
140
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2
2. 1-in
2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
1/3

LP2301LT1G相關(guān)型號PDF文件下載

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