鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Radiant power
CW
Pulse
Reverse voltage
Laser
PIN
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
P
O
P
O
V
R
V
R(PIN)
P
D(PIN)
T
opr
T
stg
Rating
50
140
1.5
30
60
鈭?0
to
+70
鈭?0
to
+80
Unit
mW
mW
V
V
mW
擄C
擄C
6.5
1 : LD Anode
2 : Common Case
3 : PD Cathode
L5 Package
Internal Connection
2
LD
1
3
鈻?/div>
Electro-Optical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Differential efficiency
Beam radiation angle
Horizontal
Vertical
Optical axis accuracy
X direction
Y direction
Astigmatism difference
Accuracy of emission point
Symbol
I
th
I
OP
V
OP
位
L
畏
胃
//
胃
鈯?/div>
胃
X
胃
Y
As
鈭?/div>
X
鈭?/div>
Y
鈭?/div>
Z
CW, P
O
=
3 mW
CW, P
O
=
45/I
OP
(50 mW)
鈭?/div>
I
OP
(5 mW)
CW, P
O
=
50 mW
CW
CW, P
O
=
50 mW
Conditions
Min
20
65
2.0
653
0.85
7.0
15
鈭?.5
鈭?.5
錚?/div>
鈭?0
鈭?0
鈭?0
Typ
35
95
2.5
657
1.00
9.0
17
錚?/div>
錚?/div>
2
錚?/div>
錚?/div>
錚?/div>
Max
50
110
3.0
660
1.2
11.0
20
+1.5
+2.5
10
+60
+60
+60
Unit
mA
mA
V
nm
W/A
擄
擄
擄
擄
碌m
碌m
碌m
碌m
Publication date: November 2003
SHB00003AED
1
LNCQ10PS相關(guān)型號(hào)PDF文件下載
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Red Light Semiconductor Laser
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Opto-Electronic Device - Light Emitting Diodes - Laser
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