Semiconductor Laser
LNC803PS
High Power Output Semiconductor Laser
Overview
The LNC803PS is a GaAlAs laser diode which provides stable,
continuous, single mode oscillation of near infrared light at room
temperature. This product can be used in a wide range of light source
applications, including laser printers, facsimiles, optical disk memory,
and optical information devices.
酶1.0 min.
酶5.6
+0
鈥?.025
酶4.3鹵0.1
酶3.55鹵0.1
Unit : mm
2
0.4鹵0.1
110藲鹵1藲
LD
1
Junction plane
Reference plane
1.0鹵0.1
3
PD
Features
Low threshold oscillation
Stable single horizontal mode oscillation
Built-in PIN photodiode for light output monitors
Light output is continuously variable as far as 60 mW
Supports direct modulation
Near infrared oscillating wavelength
Long lifetime, high reliability
2.3鹵0.2
1.27
0.25
Reference slot
Kovar glass
LD pellet
Reference plane
酶1.2max.
3-酶0.45
2
1.2鹵0.1
6.5鹵0.5
0.5
max.
1
酶2.0
Bottom view
3
1: LD Anode
2: Common Case
3: PD Cathode
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Radiant power
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
Laser
PIN
Symbol
P
O
V
R
V
R
(PIN)
P
d
(PIN)
T
opr
T
stg
Ratings
40
1.5
30
100
鈥?0 to +60
鈥?40 to +80
Unit
mW
V
V
mW
藲C
藲C
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Radiation angle
Horizontal direction
Vertical direction
Symbol
I
th
I
OP
V
OP
位
L
胃
//*
胃
鈯?/div>
畏
I
R
I
P
胃
X
胃
Y
*
Conditions
CW
P
O
= 32mW
P
O
= 32mW
P
O
= 32mW
P
O
=32mW
P
O
= 32mW
CW P
O
= 28mW/I(30mW 鈥?4mW)
V
R
(PIN) = 5V
P
O
= 32mW, V
R
(PIN) = 5V
P
O
= 32mW
P
O
= 32mW
min
10
30
815
7
18
0.6
typ
25
50
2.0
830
10
25
1.0
max
40
90
3.0
845
13
28
1.5
0.1
Unit
mA
mA
V
nm
deg.
deg.
mW/mA
碌A(chǔ)
mA
deg.
deg.
Differential efficiency
Reverse current (DC)
PIN photo current
Optical axis
accuracy
Oscillation mode
*
X direction
Y direction
鈥?.0
鈥?.0
+2.0
+3.0
Single horizontal mode
胃
//
and
胃
鈯?/div>
are the angles where the optical intencity is a half of its max. value.( half full angle )
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