Semiconductor Laser
LNC802PS
GaAlAs Semiconductor Laser
酶5.6
+0
鈥?.025
酶4.3鹵0.1
酶3.55鹵0.1
酶1.0 min.
Y
0.4鹵0.1
110藲鹵1藲
Unit : mm
2
Features
Low threshold current
Stable single horizontal mode oscillation
Long lifetime, high reliability
High radiant power : 50mW
X
LD
3
PD
1
Junction plane
1.0鹵0.1
2.3鹵0.2
1.27
0.25
Z
Reference slot
Kovar glass
LD pellet
Reference plane
酶1.2 max.
3-酶0.45
2
Optical disk memory
Medical equipment
6.5鹵0.5
Optical data processing devices
0.5 max.
Applications
1.2鹵0.1
1
酶2.0
3
1: LD Anode
2: Common Case
3: PD Cathode
Bottom view
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Radiant power
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
Laser
PIN
Symbol
P
O
V
R
V
R
(PIN)
P
d
(PIN)
T
opr
T
stg
Ratings
50
1.5
30
100
鈥?0 to +60
鈥?40 to +80
Unit
mW
V
V
mW
藲C
藲C
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Radiation angle
Horizontal direction
Vertical direction
Symbol
I
th
I
OP
V
OP
位
L
胃
//
*1
胃
鈯?/div>
*1
畏
I
P
I
R
胃
X
胃
Y
CW
Conditions
CW P
O
= 40mW
CW P
O
= 40mW
CW P
O
= 40mW
CW P
O
= 40mW
CW P
O
= 40mW
CW P
O
= 36mW/I(40mW 鈥?4mW)
CW P
O
= 40mW, V
R
(PIN) = 5V
V
R
(PIN) = 15V
CW P
O
= 40mW
CW P
O
= 40mW
min
10
45
815
7
18
0.6
typ
30
65
2.0
830
10
25
1.0
max
50
100
3.0
845
13
30
1.5
Unit
mA
mA
V
nm
deg.
deg.
mA
Differential efficiency
PIN photo current
Reverse current (DC)
Optical axis
accuracy
*1
0.1
鈥?.0
鈥?.0
+2.0
+3.0
碌A(chǔ)
deg.
deg.
X direction
Y direction
The radiation angle is indicated as half full angles.
1
1
2
