Semiconductor Laser
LNC702PS
GaAlAs Semiconductor Laser
酶5.6
+0
鈥?.025
酶4.3鹵0.1
酶3.55鹵0.1
酶1.0 min.
Unit : mm
2
Low threshold current
Stable single horizontal mode oscillation
Low drooping
0.4鹵0.1
110藲鹵1藲
Features
LD
1
Junction plane
Reference plane
1.0鹵0.1
3
PD
2.3鹵0.2
1.27鹵0.07
0.25
Reference slot
Applications
Optical data processing devices
Laser beam printers
1.2鹵0.1
Reference plane
3-酶0.45
6.5鹵0.5
2
1
酶2.0
Bottom view
3
1: LD Anode
2: Common Case
3: PD Cathode
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Radiant power
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
Laser
PIN
Symbol
P
O
V
R
V
R
(PIN)
P
d
(PIN)
T
opr
T
stg
Ratings
5
2
30
60
鈥?0 to +60
鈥?40 to +85
Unit
mW
V
V
mW
藲C
藲C
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Radiation angle
Horizontal direction
Vertical direction
Symbol
I
th
I
OP
V
OP
位
L*2
胃
//
*1
胃
鈯?/div>
*1
I
P
I
R
胃
X
胃
Y
CW
Conditions
CW P
O
= 5mW
CW P
O
= 5mW
CW P
O
= 5mW
CW P
O
= 5mW
CW P
O
= 5mW
CW P
O
= 5mW, V
R
(PIN) = 5V
V
R
(PIN) = 15V
CW P
O
= 5mW
CW P
O
= 5mW
min
15
20
780
8
20
0.3
鈥?.0
鈥?.0
typ
25
35
1.9
795
12
33
0.8
max
40
50
2.5
810
15
45
1.6
0.1
+2.0
+3.0
Unit
mA
mA
V
nm
deg.
deg.
mA
碌A
deg.
deg.
PIN photo current
Reverse current (DC)
Optical axis
accuracy
*1
The
X direction
Y direction
radiation angle is indicated as half full angle.
*2
Sampling inspections are to be performed.
On each wafer, n = 10 samplings are to be performed, with an evaluation criterion of zero rejects.
1
1
2
