Semiconductor Laser
LNC701PS
GaAlAs Semiconductor Laser
酶5.6
+0
鈥?.025
酶4.3鹵0.1
酶3.55鹵0.1
酶1.0 min.
Y
0.4鹵0.1
110藲鹵1藲
Unit : mm
2
Features
Low threshold current
Stable single horizontal mode oscillation
Long lifetime, high reliability
X
LD
3
PD
1
Junction plane
1.0鹵0.1
2.3鹵0.2
1.27
0.25
Z
Reference slot
Kovar glass
LD pellet
Reference plane
酶1.2 max.
3-酶0.45
2
Applications
Optical data processing devices
Optical disk memory drive
Optical measuring equipment
1.2鹵0.1
6.5鹵0.5
0.5 max.
1
酶2.0
3
1: LD anode
2: Common case
3: PD cathode
Bottom view
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Radiant power
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
Laser
PIN
Symbol
P
O
V
R
V
R
(PIN)
P
d
(PIN)
T
opr
T
stg
Ratings
35
2
30
100
鈥?0 to +60
鈥?40 to +80
Unit
mW
V
V
mW
藲C
藲C
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Radiation angle
Horizontal direction
*1
Vertical direction
*1
Symbol
I
th
I
OP
V
OP
位
L
胃
//
胃
鈯?/div>
畏
I
P
I
R
胃
X
胃
Y
CW
Conditions
CW P
O
= 30mW
CW P
O
= 30mW
CW P
O
= 30mW
CW P
O
= 30mW
CW P
O
= 30mW
CW P
O
= 3 - 30mW
CW P
O
= 30mW, V
R
(PIN) = 5V
V
R
(PIN) = 15V
CW P
O
= 30mW
CW P
O
= 30mW
min
10
30
780
8.5
23
0.8
typ
20
55
2.0
785
10
25
1.0
0.3
max
30
70
2.5
790
11.5
28
1.2
Unit
mA
mA
V
nm
deg.
deg.
mA
Differential efficiency
PIN photo current
Reverse current (DC)
Optical axis
accuracy
*1
0.1
鈥?.0
鈥?.0
+2.0
+3.0
碌A(chǔ)
deg.
deg.
X direction
Y direction
The radiation angle is indicated as the full angle at half maximum.
1
1
2
