Infrared Light Emitting Diodes
LNA4801L
GaAlAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.0 max.
2-0.8 max.
2-0.5鹵0.1
0.5鹵0.1
(1.5)
2.54
1.7
For optical control systems
Features
Fast response and high-speed modulation capability :
f
C
= 20 MHz (typ.)
Wide directivity :
胃
= 22 deg. (typ.)
Transparent epoxy resin package
酶3.8鹵0.2
酶3.0鹵0.2
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
190
100
1
3
鈥?5 to +85
鈥?0 to +100
Unit
mW
mA
A
V
藲C
藲C
1.0
15.0鹵1.0
4.5鹵0.3
5.0鹵0.2
0.6
1
2
1: Anode
2: Cathode
f = 100Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Center radiant intensity
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Half-power angle
Cutoff frequency
*
Symbol
I
e
位
P
鈭單?/div>
V
F
I
R
胃
f
C*
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
The angle in which radiant intencity is 50%
min
12
typ
860
40
1.6
22
20
max
Unit
mW/sr
nm
nm
1.9
10
V
碌A(chǔ)
deg.
MHz
I
FP
= 50mA + 10mA
p-p
O C
O
Frequency when modulation optical power decreases by 3dB from 1MHz
(f MHz)
(
10 log PP (1MHz) = 鈥?3
)
1
1
2
