Visible Light Emitting Diodes (Red)
LNA4501F
GaAlAs Red Light Emitting Diode
For optical fiber communications and control systems
5.0鹵0.2
酶4.8鹵0.2
酶4.4鹵0.2
C0.2
Features
Red light emission close to monochromatic light :
位
P
= 680 nm
High-power output, high-efficiency : P
O
= 3 mW
High coupling characteristics and suits to a plastic fiber
High-speed response : 鈥?dB modulation of 10 MHz
Flat resin package : 酶 4.8 mm
12.5鹵1.0
4.4鹵0.3
1.0
2-1.0鹵0.1
2- 0.6鹵0.15
(1.5)
2.54
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
酶5.4鹵0.2
2
1
1: Cathode
2: Anode
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
120
40
200
3
鈥?5 to +85
鈥?0 to +100
Unit
mW
mA
mA
V
藲C
藲C
t
w
= 10
碌s,
Duty cycle = 10 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Response time
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
t
r
, t
f
胃
Conditions
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
V
R
= 3V
I
FP
= 100mA
The angle in which radiant intencity is 50%
min
1
typ
3
680
20
1.8
30
30
max
Not soldered 2.0 max.
Unit : mm
Unit
mW
nm
nm
2.6
100
V
碌A(chǔ)
ns
deg.
Note : Before using this product, be sure provide and/or receive approvals regarding individual specifications.
1
1
2
