Infrared Light Emitting Diodes
LNA4401L
GaAlAs Infrared Light Emitting Diode
酶4.6鹵0.15
Unit : mm
Glass lens
For optical control systems
Features
High-power output, high-efficiency : P
O
= 10 mW (typ.)
Fast response and high-speed modulation capability :
f
C
= 20 MHz (typ.)
TO-18 standard type package
12.7 min.
6.3鹵0.3
2-酶0.45鹵0.05
2.54鹵0.25
0
鹵
1.
2
0.
15
3藲
45
鹵
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
1.
0
鹵
2 1
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
190
100
1
3
鈥?5 to +85
鈥?0 to +100
Unit
mW
mA
A
V
藲C
藲C
0.
酶5.75 max.
1: Anode
2: Cathode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Cutoff frequency
*
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
胃
f
C*
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
6
typ
10
860
40
1.6
max
Unit
mW
nm
nm
1.9
10
V
碌A
pF
deg.
MHz
6
20
I
FP
= 50mA + 10mA
p-p
O C
O
Frequency when modulation optical power decreases by 3dB from 1MHz.
(f MHz)
(
10 log PP (1MHz) = 鈥?3
)
1
1
2
