Infrared Light Emitting Diodes
LNA2W01L
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
Features
High-power output, high-efficiency : P
O
= 4.5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Infrared light emission close to monochromatic light :
位
P
= 950 nm (typ.)
1.05鹵0.1
1
0.5鹵0.1
Type number : Cathode mark (Red)
10.0 min.
10.0 min.
3.2鹵0.3 3.2鹵0.3
酶1.8
2
45
藲
2.2鹵0.15
(0.7)
0.15
(0.7)
1.8 2.8鹵0.2
1.8
Narrow directivity :
胃
= 18 deg. (typ.)
Ultra-miniature double ended package
2.8鹵0.2
R0.9
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
75
50
1
3
鈥?5 to +85
鈥?0 to +100
Unit
mW
mA
A
V
藲C
藲C
0.85
鹵
0.15
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
胃
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
3
typ
4.5
950
50
1.25
35
18
max
Unit
mW
nm
nm
1.5
10
碌A(chǔ)
pF
deg.
0.4鹵0.1
V
1
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