Infrared Light Emitting Diodes
LNA2904L
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
Features
High-power output, high-efficiency : I
e
= 10 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors
Good radiant power output linearity with respect to input current
High center radiant intensity
Transparent epoxy resin package
13.5鹵1.0
11.5鹵1.0
3.9鹵0.3
1.0
7.65鹵0.2
酶5.0鹵0.2
Not soldered
2-1.0鹵0.15
2-0.6鹵0.15
2.54
0.6鹵0.15
2
1
1: Cathode
2: Anode
酶6.0鹵0.2
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
1.5
3
鈥?5 to +85
鈥?40 to +100
Unit
mW
mA
A
V
藲C
藲C
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Center radiant intensity
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Symbol
I
e
位
P
鈭單?/div>
V
F
I
R
C
t
胃
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
10
1.0
typ
950
50
1.35
50
20
max
Unit
mW/sr
nm
nm
1.6
10
V
碌A(chǔ)
pF
deg.
1
1
2
