Infrared Light Emitting Diodes
LNA2903L
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
Features
High-power output, high-efficiency : I
e
= 9 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors
Good radiant power output linearity with respect to input current
Wide directivity :
胃
= 20 deg. (typ.)
Transparent epoxy resin package
13.5鹵1.0
11.5鹵1.0
3.6鹵0.3
1.0
7.65鹵0.2
酶5.0鹵0.2
1.0
2-1.0鹵0.15
2-0.6鹵0.15
2.54
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
酶6.0鹵0.2
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
1.5
3
鈥?5 to +85
鈥?40 to+100
Unit
mW
mA
A
V
藲C
藲C
2
1
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant intensity at center
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Symbol
I
e
位
P
鈭單?/div>
V
F
I
R
C
t
胃
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
9
typ
950
50
1.4
35
25
0.6鹵0.15
max
Not soldered
Unit
mW/sr
nm
nm
1.6
10
V
碌A
pF
deg.
1
1
2
3
