Infrared Light Emitting Diodes
LNA2901L
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.25
2-0.8 max.
2-0.6鹵0.15
2.54
For optical control systems
Features
High-power output, high-efficiency : I
e
= 9 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors
Long lead-wire type
26.3鹵1.0
24.3鹵1.0
5.25鹵0.3
1.5
7.65鹵0.2
1.0
酶5.0鹵0.2
Transparent epoxy resin package
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
50
1
3
鈥?5 to +85
鈥?40 to +100
Unit
mW
mA
A
V
藲C
藲C
酶6.0鹵0.2
Absolute Maximum Ratings
(Ta = 25藲C)
2
1
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Center radiant intensity
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Pulse forward voltage
Reverse current (DC)
Capacitance between terminals
Half-power angle
*
Symbol
I
e
P
O
位
P
鈭單?/div>
V
F
V
FP*
I
R
C
t
胃
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
FP
= 1A
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
9
typ
12
950
50
1.3
0.6鹵0.15
max
Unit
mW/sr
mW
nm
nm
1.5
3
10
V
V
碌A(chǔ)
pF
deg.
35
20
f = 100 Hz, Duty cycle = 0.1 %
1
1
2
