Infrared Light Emitting Diodes
LNA2802L
(LN68)
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.0 max.
2-0.8 max.
2-0.5鹵0.1
0.5鹵0.1
For optical control systems
Features
High-power output, high-efficiency : P
O
= 5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
位
P
= 940 nm (typ.)
Good radiant power output linearity with respect to input current
Long lifetime, high reliability
酶3 plastic package
(1.5)
酶3.8鹵0.2
酶3.0鹵0.2
1.0
2.54
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
75
50
1
3
鈥?5 to +85
鈥?40 to +100
Unit
mW
mA
A
V
藲C
藲C
1.7
Absolute Maximum Ratings
(Ta = 25藲C)
15.0鹵1.0
4.5鹵0.3
5.0鹵0.2
0.6
1
2
1: Anode
2: Cathode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between terminals
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
胃
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
2.5
typ
5
940
50
1.3
35
20
max
Unit
mW
nm
nm
1.5
10
V
碌A
pF
deg.
Note) The part number in the parenthesis shows conventional part number.
1
1
2
3
