Infrared Light Emitting Diodes
LN59, LNA2702L
GaAs Bi-directional Infrared Light Emitting Diodes
LN59
酶2.5鹵0.2
6.0鹵0.2
1.0
Not soldered
Unit : mm
4.0鹵0.2
1.8鹵0.2
For light source of VCR (VHS System)
Features
Two-way directivity
Small resin package
Long lifetime, high reliability
Long lead wire type (LNA2702L)
High-power output, high-efficiency : P
O
= 1.8 mW (min.)
2-R1.25鹵0.1
4.0鹵0.2
1.0
3.3
15.3鹵1.0
2-0.8 max.
2-0.5鹵0.1
0.5鹵0.1
1
C0.5
2
2.54
Applications
Light source for tape end sensor of VCR and video camera
recorder of VHS system
Light source for 2-bit photo sensor
1: Anode
2: Cathode
LNA2702L
Not soldered
酶2.5鹵0.2
6.0鹵0.2
4.0鹵0.2
3.3
1.0
4.0鹵0.2
1.8鹵0.2
2-R1.25鹵0.1
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
75
50
1
3
鈥?5 to +85
鈥?40 to +100
Unit
mW
mA
A
V
藲C
16.6
1.0
2-0.8 max.
2-0.5鹵0.1
0.5鹵0.1
33.7鹵0.5
3.5
2-0.7 max.
2-0.5鹵0.1
1
2
2.54
C0.5
1: Anode
2: Cathode
藲C
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
*
Symbol
P
O*
位
P
鈭單?/div>
V
F
I
R
C
t
Conditions
I
F
= 50mA
I
F
= 20mA
I
F
= 20mA
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
min
1.8
typ
950
50
1.3
35
max
Unit
mW
nm
nm
1.5
10
V
碌A(chǔ)
pF
Radiant power P
O
shows each value of radiant flux P1 and P2 in two directions.
P1
P2
1
1
2
