Infrared Light Emitting Diodes
LNA2603F
(LN155)
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 0.8 max.
For optical control systems
1.5鹵0.2
Features
High-power output, high-efficiency : P
O
= 6 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
位
P
= 940 nm (typ.)
Long lifetime, high reliability
Thin side-view type package
3.9鹵0.25
4.5鹵0.15
3.5鹵0.15
2.1鹵0.15
1.6鹵0.15
0.8鹵0.1
12.8 min.
(2.95)
2-1.2鹵0.3
2-0.45鹵0.15
0.45鹵0.15
1
2.54 2
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
1.5
3
鈥?5 to +85
鈥?40 to +100
Unit
mW
mA
A
V
藲C
藲C
1: Anode
2: Cathode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
t
r
t
f
胃
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
I
FP
= 100mA
The angle in which radiant intencity is 50%
min
3
typ
6
940
50
1.3
45
1
1
80
max
Unit
mW
nm
nm
1.6
10
V
碌A(chǔ)
pF
碌s
碌s
deg.
Note) The part number in the parenthesis shows conventional part number.
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