Infrared Light Emitting Diodes
LNA2601L
GaAs Infrared Light Emitting Diode
Unit : mm
3.5鹵0.3
2.4 1.1 0.8 max.
1.1
0.8
For optical control systems
Features
High-power output, high-efficiency
Emitted light spectrum suited for silicon photodetectors
Ultra-miniature, thin side-view type package
Infrared light emission close to monochromatic light :
位
P
= 950 nm
3.0鹵0.3
酶1.1
R0.5
1.95鹵0.25
1.4鹵0.2
0.9
0.5
12 min.
Not Soldered 2.15 max.
2-0.5鹵0.15
0.3鹵0.15
2
2.54
1
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
75
50
1
3
鈥?5 to +85
鈥?40 to +100
Unit
mW
mA
A
V
藲C
藲C
1: Anode
2: Cathode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
胃
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
1.5
typ
950
50
max
Unit
mW
nm
nm
1.5
10
35
20
V
碌A(chǔ)
pF
deg.
1
1
2
