Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diodes
For optical control systems
Features
High-power output, high-efficiency : P
O
= 7.5 mW (typ.)
Fast response and high-speed modulation capability :
12.7 min.
4.5 0.2
LNA2403F, LNA2402L
(LN151F, LN151L)
LNA2403F
4.6 0.15
Unit : mm
Glass window
2- 0.45 0.05
2.54 0.25
0
1.
2
0.
5
45
1.
0
t
r
, t
f
= 1
碌s
(typ.)
Infrared light emission close to monochromatic light :
位
P
= 950 nm (typ.)
Narrow directivity, suitable for effective use of radiant power
(LNA2402L (LN151L))
Wide directivity, matched for external optical systems
(LNA2403F (LN151F))
TO-18 standard type package
0.
1
3
2 1
5.75 max.
1: Anode
2: Cathode
LNA2402L
4.6 0.15
Unit : mm
Glass lens
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
2
3
鈥?5 to +100
鈥?0 to+100
Unit
12.7 min.
mW
mA
A
V
6.3 0.3
2- 0.45
0.05
2.54 0.25
1.
藲C
0
0.
0
0.
2
藲C
1.
15
45
3
f = 100 Hz, Duty cycle = 0.1 %
2 1
5.75 max.
1: Anode
2: Cathode
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
LNA2403F
LNA2402L
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
t
r
t
f
胃
Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
I
FP
= 100mA
The angle in which radiant intencity is 50%
min
5
typ
7.5
950
50
1.3
60
1
1
32
8
max
Unit
mW
nm
nm
1.6
10
V
碌A
pF
碌s
碌s
deg.
deg.
Note) The part numbers in the parenthesis show conventional part number.
1
1
2
3
