Infrared Light Emitting Diodes
LN78
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control cystems
酶2.4
2.9鹵0.25
4.5鹵0.3
3.9鹵0.3
Features
High-power output, high-efficiency : P
O
= 10 mW (typ.)
High-speed modulation capability : f
C
= 12 MHz
12.8 min.
2.8
2.4
2-1.2鹵0.3
Not soldered
1.2
0.9
1.7鹵0.2
0.8
1.5
2-0.45鹵0.15
1
2.54
R1.2
2
0.45鹵0.15
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
R0.6
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
180
100
1
3
鈥?5 to+85
鈥?0 to +100
Unit
mW
mA
A
V
藲C
藲C
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Cutoff frequency
*
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
胃
f
C*
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
6
typ
10
880
50
1.5
50
40
12
max
Unit
mW
nm
nm
1.8
10
V
碌A(chǔ)
pF
deg.
MHz
I
FP
= 50mA + 10mA
p-p
O C
O
Frequency when modulation optical power decreases by 3dB from 1MHz.
(f MHz)
(
10 log PP (1MHz) = 鈥?3
)
1
1
2
