Infrared Light Emitting Diodes
LN671
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
4
5.3 max.
5.0鹵0.1
2.54鹵0.1
3
1.0鹵0.1
Unit : mm
1.8鹵0.3
0.8鹵0.2
Features
High-power output, high-efficiency : P
O
= 10 mW (typ.)
Fast response and high-speed modulation capability :
t
r
, t
f
= 30 ns(typ.)
Small plastic package
Epin 酶3.2
13.5鹵0.1
4.0鹵0.1
1.0鹵0.3
1.0鹵0.3
4-0.6
+0.1
鈥?.2
1.0鹵0.1
4.3 max.
0.2
+0.1
鈥?.05
4-0.5鹵0.15
1
10藲
2
10藲
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
5藲
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
130
70
1
3
鈥?5 to +85
鈥?0 to +100
Unit
mW
mA
A
V
藲C
藲C
5藲
1: Anode
2: Common Cathode
3: NC
4: Common Cathode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Rise time
Fall time
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
t
r
t
f
胃
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 3V
I
FP
= 50mA
I
FP
= 50mA
The angle in which radiant intencity is 50%
min
6
typ
10
880
50
1.4
30
30
50
max
10藲 1 0 藲
Unit
mW
nm
nm
1.8
10
V
碌A(chǔ)
ns
ns
deg.
1
1
2
