Infrared Light Emitting Diodes
LN66L
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.25
2-0.8 max.
2-0.6鹵0.15
2.54
For optical control systems
Features
High-power output, high-efficiency :P
O
= 8 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Wide directivity :
胃
= 25 deg. (typ.)
Transparent epoxy resin package
Long lead-wire type
26.3鹵1.0
24.3鹵1.0
5.25鹵0.3
1.5
1.0 7.65鹵0.2
酶5.0鹵0.2
Good radiant power output linearity with respect to input current
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
1.5
3
鈥?5 to +85
鈥?40 to +100
Unit
mW
mA
A
V
藲C
藲C
酶6.0鹵0.2
Absolute Maximum Ratings
(Ta = 25藲C)
2
1
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Symbol
P
O*
位
P
鈭單?/div>
V
F
I
R
C
t
胃
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
5
typ
8
950
50
1.3
35
25
max
0.6鹵0.15
Unit
mW
nm
nm
1.6
10
V
碌A
pF
deg.
*
P
O
Classifications
Class
P
O
(mW)
R
5 to 8
S
>7
1
1
2
3
