Infrared Light Emitting Diodes
LN65
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
酶3.5鹵0.2
4.5鹵0.3
Features
High-power output, high-efficiency : P
O
= 5.5 mW (typ.)
Good radiant power output linearity with respect to input current
Suited for use in high-speed modulation
Infrared light emission close to monochromatic light :
位
P
= 950 nm (typ.)
12.5 min.
10.0 min.
2.8
1.8
1.0
4.8鹵0.3
2.4 2.4
2-0.98鹵0.2
2-0.45鹵0.15
0.45鹵0.15
2.54
R1.75
Not soldered
4.2鹵0.3
2.3 1.9
1.2
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
1.5
3
鈥?5 to +85
鈥?40 to +100
Unit
mW
mA
A
V
藲C
藲C
1
2
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
胃
Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
4.3
typ
5.5
950
50
1.3
50
35
max
Unit
mW
nm
nm
1.6
10
V
碌A
pF
deg.
1
1
2
3
