Infrared Light Emitting Diodes
LN58
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
4.5鹵0.3
1.2
2.9鹵0.25
High-power output, high-efficiency : P
O
= 3.5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Infrared light emission close to monochromatic light :
位
P
= 950 nm (typ.)
Small size, thin side-view type package
3.9鹵0.3
12.8 min.
2.8
2.4 1.5
Features
2-1.2鹵0.3
2-0.45鹵0.15
1
2.54
R1.2
2
0.45鹵0.15
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
R0.6
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
75
50
1
3
鈥?5 to +85
鈥?0 to+100
Unit
mW
mA
A
V
藲C
藲C
Not soldered
酶2.4
0.9
1.7鹵0.2
0.8
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
胃
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
1.8
typ
3.5
950
50
max
Unit
mW
nm
nm
1.5
10
35
35
V
碌A(chǔ)
pF
deg.
1
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