Infrared Light Emitting Diodes
LN55
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
Features
High-power output, high-efficiency : P
O
= 3.5 mW (typ.)
Suited for use with silicon photodetectors
Infrared light emission close to monochromatic light :
位
P
= 950 nm (typ.)
High-speed modulation capability
4.5鹵0.3
12.8 min.
10.0 min.
2.8
1.8
1.0
4.8鹵0.3
2.4 2.4
2-0.98鹵0.2
2-0.45鹵0.15
0.45鹵0.15
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
75
50
1
3
鈥?5 to +85
鈥?0 to +100
Unit
mW
mA
A
V
藲C
藲C
1
R1.75
2.54
Not soldered
酶3.5鹵0.2
4.2鹵0.3
2.3 1.9
1.2
2
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
胃
Conditions
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
The angle in which radiant intencity is 50%
min
1.8
typ
3.5
950
50
max
Unit
mW
nm
nm
1.5
10
50
35
V
碌A(chǔ)
pF
deg.
I
F
鈥?Ta
60
10
2
I
FP
鈥?Duty cycle
80
Ta = 25藲C
70
I
F
鈥?V
F
Ta = 25藲C
I
F
(mA)
I
FP
(A)
50
I
F
(mA)
Forward current
10
鈥?
1
10
10
2
10
60
50
40
30
20
10
Allowable forward current
40
Pulse forward current
1
30
10
鈥?
20
10
10
鈥?
0
鈥?25
0
20
40
60
80
100
10
鈥?
10
鈥?
0
0
0.4
0.8
1.2
1.6
Ambient temperature Ta (藲C )
Duty cycle (%)
Forward voltage V
F
(V)
1
1
2
