Infrared Light Emitting Diodes
LN52
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
Features
High-power output, high-efficiency : P
O
= 6 mW (typ.)
Wide directivity, matched for external optical systems :
胃
= 100 deg.
Infrared light emission close to monochromatic light :
位
P
= 950 nm
Optimum for mesuring instruments and control equipments
in conbination with silicon photodetectors
酶5.35
+0.2
鈥?.1
酶4.2
+0.1
鈥?.2
3.0鹵0.3
12.7 min.
2.0鹵0.1
0.2鹵0.05
2-酶0.45鹵0.05
1.
0
鈥?/div>
5
.1
+0 0.1
1.
0
鹵
0.
1
45
鹵
3藲
2
1
Absolute Maximum Ratings
(Ta = 25藲C)
2.54鹵0.25
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
2
3
鈥?5 to +85
鈥?0 to +100
Unit
mW
mA
A
V
藲C
藲C
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
t
r
t
f
胃
Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
I
FP
= 100mA
The angle in which radiant intencity is 50%
min
3.5
typ
6
950
50
1.25
50
1
1
100
max
Unit
mW
nm
nm
1.6
10
V
碌A(chǔ)
pF
碌s
碌s
deg.
1
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