Infrared Light Emitting Diodes
LN51F, LN51L
GaAs Infrared Light Emitting Diodes
For optical control systems
LN51F
酶4.6鹵0.15
Unit : mm
Glass window
12.7 min.
4.5鹵0.2
2-酶0.45鹵0.05
Features
High-power output, high-efficiency : P
O
= 6 mW (typ.)
Fast response : t
r
, t
f
= 1
碌s
(typ.)
2.54鹵0.25
0
1.
.2
鹵
0
1.
0
鹵
0.
15
Infrared light emission close to monochromatic light :
位
P
=950 nm (typ.)
Narrow directivity, suitable for effective use of optical output :
胃
= 8 deg. (LN51L)
Wide directivity, matched for external optical systems :
胃
= 32 deg. (LN51F)
TO-18 standard type package
3藲
45
鹵
2 1
酶5.75 max.
1: Cathode
2: Anode
LN51L
酶4.6鹵0.15
Glass lens
Unit : mm
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
150
100
2
5
鈥?5 to +100
鈥?0 to +100
Unit
mW
mA
A
V
藲C
藲C
12.7 min.
6.3鹵0.3
2-酶0.45鹵0.05
2.54鹵0.25
2
0.
0
鹵
1.
f = 100 Hz, Duty cycle = 0.1 %
1.
0
鹵
0.
15
3藲
45
鹵
2 1
酶5.75 max.
1: Cathode
2: Anode
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
LN51F
LN51L
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
t
r
t
f
胃
Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 5V
V
R
= 0V, f = 1MHz
I
FP
= 100mA
The angle in which radiant intencity is 50%
min
3
typ
6
950
50
1.25
0.005
50
1
1
32
8
max
Unit
mW
nm
nm
1.5
10
V
碌A
pF
碌s
碌s
deg.
deg.
1
1
2
