Infrared Light Emitting Diodes
LN184
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
Features
High-power output, high-efficiency : P
O
= 5 mW (typ.)
Fast response and high-speed modulation capability : t
r
, t
f
= 20 ns(typ.)
Infrared light emission close to monochromatics light :
位
P
= 880 nm
(typ.)
Narrow directivity using spherical lenses; works well with optical
systems in auto focus systems
4.5鹵0.2
2.0
(0.29)
,,,
酶4.6鹵0.15
1.0 max.
Unit : mm
Glass window
Spherical lens
12.7 min.
(0.4)
2-酶0.45鹵0.05
2
2.45鹵0.25
1
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Pulse
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
190
90
230
3
鈥?5 to +85
鈥?40 to +100
Unit
mW
mA
mA
V
藲C
藲C
酶4.0鹵0.1
酶5.75max.
1: Anode
2: Cathode
conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated
with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5%
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Rise time
Fall time
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
t
r
t
f
胃
Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
I
FP
= 100mA
I
FP
= 100mA
The angle in which radiant intencity is 50%
min
3.5
typ
880
50
1.55
20
20
20
max
Unit
mW
nm
nm
1.9
10
V
碌A(chǔ)
ns
ns
deg.
1
1
2
