Infrared Light Emitting Diodes
LN175
GaAlAs Infrared Light Emitting Diode
Unit : mm
Not soldered 0.8 max.
For optical control systems
1.5鹵0.2
Features
High-power output, high-efficiency : P
O
= 12 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
位
P
= 900 nm (typ.)
Good radiant power output linearity with respect to input current
Wide directivity :
胃
= 120 deg. (typ.)
3.9鹵0.25
4.5鹵0.15
3.5鹵0.15
2.1鹵0.15
1.6鹵0.15
0.8鹵0.1
12.8 min.
(2.95)
2-1.2鹵0.3
2-0.45鹵0.15
0.45鹵0.15
1
2.54 2
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
170
100
2
3
鈥?5 to +85
鈥?40 to +100
Unit
mW
mA
A
V
藲C
藲C
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Response time
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
t
r
, t
f
胃
Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
I
F
= 100mA
The angle in which radiant intencity is 50%
min
7
typ
12
900
70
1.4
50
700
120
max
Unit
mW
nm
nm
1.7
10
V
碌A(chǔ)
pF
ns
deg.
1
1
2
