Infrared Light Emitting Diodes
LN172
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
Features
High-power output, high-efficiency : P
O
= 12 mW (typ.)
Light emitting spectrum suited for silicon photodetectors :
位
P
= 900 nm (typ.)
Good optical power output linearity with respect to input current
15
2.4鹵0.3
12.7 min.
1.2鹵0.1
0.25鹵0.1
酶4.2
+0.2
鈥?.1
2-酶0.45鹵0.05
Wide directivity :
胃
= 100 deg. (typ.)
Long lifetime, high reliability
0
鹵
1.
0.
0.
15
1.
0
鹵
45
鹵
3藲
酶5.35
+0.2
鈥?.1
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
2
1
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
170
100
2
3
鈥?5 to +85
鈥?0 to +100
Unit
mW
mA
A
V
藲C
藲C
2.54鹵0.25
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Response time
Half-power angle
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
t
r
, t
f
胃
Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
I
F
= 100mA
The angle in which radiant intencity is 50%
min
7
typ
12
900
70
1.4
50
700
100
max
Unit
mW
nm
nm
1.7
10
V
碌A(chǔ)
pF
ns
deg.
1
1
2
