Infrared Light Emitting Diodes
LNA2701L
GaAs Bi-directional Infrared Light Emitting Diode
8藲
8藲
Unit : mm
For light source of VCR (VHS System)
0.5 max.
Features
Two-way directivity
High-power output, high-efficiency : P
O
= 1.8 mW (min.)
Small resin package
Long lifetime, high reliability
Thin type package modified from LN59
2.8鹵0.2
2-C0.5
8藲
26
.5
藲
3.8鹵0.2
2.4鹵0.2
0.8
酶1.4鹵0.2
8藲
8藲
1.0
26
.5藲
16.9鹵1.0
Not soldered 2.0
0.8
2.8鹵0.2
1.3鹵0.2
8藲
2-R0.7
8藲
0.15
2-0.7 max.
2-0.5鹵0.1
(1.5)
Applications
Light source for tape end sensor of VCR and video camera
recorder of VHS system
Light source for 2-bit photo sensor
0.5鹵0.1
2
1
2.0
1: Anode
2: Cathode
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
75
50
1
3
鈥?5 to +65
鈥?30 to +85
Unit
mW
mA
A
V
藲C
藲C
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant intensity at center
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
*
Symbol
I
e*
位
P
鈭單?/div>
V
F
I
R
C
t
Conditions
I
F
= 50mA
I
F
= 20mA
I
F
= 20mA
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
min
1.2
typ
940
50
1.3
35
max
Unit
mW/sr
nm
nm
1.5
10
V
碌A(chǔ)
pF
Radiant intensity I
e
shows each value of intensity I
1
and I
2
in two directions.
I
1
I
2
1
1
2
